data sheet 1 2001-01-01 description this two-stage gaas mmic high power amplifier is intended for use in radio link applications. it provides an output power of 26 dbm at 1 db gain compression. the device is fabricated with a 0.18 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 27 - 31 ghz gaas high power amplifier mmic 27 - 31 ghz hpa preliminary data sheet ? two-stage monolithic microwave integrated circuit (mmic) hemt amplifier input/output matched to 50 ? frequency range: 27 ghz to 31 ghz gain > 11 db p ? 1db > 26 dbm p sat > 28 dbm chip size: 2.71 mm 3.0 mm esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code package 27 - 31 ghz hpa ? on request chip electrical specifications ( v g = 0.3 v, v d = 5 v, i d = 1020 ma) parameter limit values unit test conditions min. typ. max. frequency range 27 ? 31 ghz ? p ? 1db @ 30 ghz ? 26 ? dbm ? p sat @ 30 ghz ? 28 ? dbm ? gain @ 30 ghz ? 11 ? db ? input return loss ? < ? 10 ? db ? output return loss ? < ? 10 ? db ?
gaas components 27 - 31 ghz hpa data sheet 2 2001-01-01 measured data (on chip measurements) v gs = 0.3 v, v ds = 5 v, i ds1 = 380 ma; i ds2 = 640 ma; f = 27.25 ghz, 29.5 ghz, 31.75 ghz maximum ratings parameter symbol value unit drain voltage v d 5v gate voltage v g ? 2 ? + 0.8 v technology data parameter value chip thickness 75 m chip size 2.71 mm 3.0 mm dc/rf bond pads 100 m 100 m/80 m 80 m bond pad material au (plated gold) chip passivation sin (silicon nitride) -10 -5 eht09218 29.5 ghz 7 dbm 0 8 5 9 10 10 15 11 20 12 25 13 30 14 dbm db gain -5 0 5 10 20 output power input power 27.25 ghz 31.75 ghz
gaas components 27 - 31 ghz hpa data sheet 3 2001-01-01 figure 1 bond plan recommendation of bonding conditions parameter thermocompression nailhead, without ultrasonic wedge bonding bond pull test mil 883, > 2 g table temp. 250 c 250 c 1 : 2.5 g tool temp. 180 c 150 c 2 : 3.1 g scrub 100 hz ? 3 : 3.2 g bond force 50 g 25 g 4 : 3.0 g wire diameter 25 m17 m 5 : 2.8 g eht09219 rf in rf out g1 vv d1 v g2 v d2 v g1 v d1 g2 v d2 v
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